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TYPICAL PERFORMANCE CURVES (R) APT25GN120B2DQ2 APT25GN120B2DQ2G* APT25GN120B2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. (B2) T-Max(R) * * * * * 1200V NPT Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 All Ratings: TC = 25C unless otherwise specified. APT25GN120B2DQ2(G) UNIT Volts 1200 30 67 33 75 75A @ 1200V 272 -55 to 150 300 Amps @ TC = 150C Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units 1200 5 1.4 2 2 5.8 1.7 1.9 6.5 2.1 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) Volts I CES I GES RGINT 200 TBD 600 8 Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-7603 Rev B 10-2005 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) A DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT25GN120B2DQ2(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 25A TJ = 150C, R G = 4.3 7, MIN TYP MAX UNIT pF V nC 1800 105 85 9.5 155 10 85 VGE = VGE = 15V Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100H,VCE = 1200V VCC = 960V, VGE = 15V, TJ = 125C, R G = 4.3 7 Inductive Switching (25C) VCC = 800V VGE = 15V I C = 25A 75 10 22 17 280 135 TBD 1490 2150 22 17 335 225 TBD 2390 3075 A s ns RG = 4.3 7 TJ = +25C Turn-on Switching Energy (Diode) 6 J Inductive Switching (125C) VCC = 800V VGE = 15V I C = 25A ns Turn-on Switching Energy (Diode) 66 TJ = +125C RG = 4.3 7 J THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm .46 .67 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 10-2005 Rev B 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7603 TYPICAL PERFORMANCE CURVES 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 80 70 IC, COLLECTOR CURRENT (A) APT25GN120B2DQ2(G) 15V 15V 12V 11V 60 50 40 30 20 10 0 12V 11V 10V 9V 8V 7V 10V 9V 8V 7V 75 FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 16 14 12 10 FIGURE 2, Output Characteristics (TJ = 125C) I = 25A C T = 25C J 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 60 VCE = 240V VCE = 600V VCE = 960V TJ = 125C 45 TJ = 25C 30 8 6 4 2 0 TJ = -55C 15 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate Charge 3 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 3.5 3 2.5 2 1.5 1.0 0.5 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 50A 2.5 2 IC = 50A IC = 25A IC = 25A 1.5 1 0.5 IC = 12.5A IC = 12.5A 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 8 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90 0 -50 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) IC, DC COLLECTOR CURRENT(A) 80 70 60 50 40 10-2005 050-7603 Rev B 30 20 10 1.05 1.00 0.95 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0.90 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 20 15 10 5 0 VCE = 800V TJ = 25C, TJ =125C RG = 4.3 L = 100 H 350 300 250 200 150 100 50 0 VCE = 800V RG = 4.3 L = 100 H VGE =15V,TJ=25C APT25GN120B2DQ2(G) VGE =15V,TJ=125C VGE = 15V 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 300 250 RG = 4.3, L = 100H, VCE = 800V 45 40 35 RG = 4.3, L = 100H, VCE = 800V 25 20 15 10 5 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current TJ = 25 or 125C,VGE = 15V tf, FALL TIME (ns) tr, RISE TIME (ns) 30 200 150 100 50 0 TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 7000 7000 EON2, TURN ON ENERGY LOSS (J) 6000 5000 4000 3000 2000 1000 0 EOFF, TURN OFF ENERGY LOSS (J) V = 800V CE V = +15V GE R = 4.3 G 6000 5000 4000 3000 2000 V = 800V CE V = +15V GE R = 4.3 G TJ = 125C,VGE =15V TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V TJ = 25C,VGE =15V 1000 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 7000 V = 800V CE V = +15V GE R = 4.3 G 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 0 14000 SWITCHING ENERGY LOSSES (J) 12000 10000 8000 6000 4000 2000 0 0 SWITCHING ENERGY LOSSES (J) V = 800V CE V = +15V GE T = 125C J Eon2,50A Eoff,50A 6000 5000 4000 3000 2000 1000 0 0 Eoff,50A Eon2,50A Eoff,25A Eon2,25A Eoff,12.5A Eon2,12.5A 10-2005 Eoff,25A Eon2,25A Eoff,12.5A Eon2,12.5A Rev B 050-7603 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 4,000 IC, COLLECTOR CURRENT (A) Cies 80 70 60 50 40 30 20 10 APT25GN120B2DQ2(G) C, CAPACITANCE ( F) 1,000 500 P 100 50 Coes Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.50 0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL 140 FMAX, OPERATING FREQUENCY (kHz) 100 Junction temp. (C) 0.231 Power (watts) 0.230 Case temperature. (C) 0.132F 0.00403F 50 F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.3 G FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RJC 15 20 25 30 35 40 45 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10 5 10 050-7603 Rev B 10-2005 APT25GN120B2DQ2(G) 10% Gate Voltage TJ = 125C APT40DQ120 td(on) 90% tr Collector Current V CC IC V CE A D.U.T. 5% Switching Energy 10% 5% CollectorVoltage Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% Gate Voltage VTEST *DRIVER SAME TYPE AS D.U.T. TJ = 125C A td(off) 90% CollectorVoltage V CE 100uH IC V CLAMP B tf 10% 0 A DRIVER* D.U.T. Switching Energy Collector Current Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit 050-7603 Rev B 10-2005 TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 112C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 25A Forward Voltage IF = 50A IF = 25A, TJ = 125C MIN All Ratings: TC = 25C unless otherwise specified. APT25GN120B2DQ2(G) UNIT Amps 40 63 210 TYP MAX UNIT Volts STATIC ELECTRICAL CHARACTERISTICS 2.46 2.98 1.83 MIN TYP MAX UNIT ns nC DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current 0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.7 0.40 0.30 0.20 0.10 0 10-5 0.5 0.3 0.1 0.05 10-4 Note: 26 350 570 4 430 2200 9 210 3400 29 - IF = 40A, diF/dt = -200A/s VR = 800V, TC = 25C - Amps ns nC Amps ns nC Amps IF = 40A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 40A, diF/dt = -1000A/s VR = 800V, TC = 125C 0.9 PDM t1 t2 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (C) 0.0442 C/W 0.00222 J/C Case temperature (C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 050-7603 0.324 C/W 0.0596 J/C Rev B Power (watts) 0.242 C/W 0.00586 J/C 10-2005 120 100 80 60 40 20 0 TJ = 125C TJ = 25C TJ = -55C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 5000 Qrr, REVERSE RECOVERY CHARGE (nC) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 20A 40A T = 125C J V = 800V R 600 trr, REVERSE RECOVERY TIME (ns) 500 400 300 200 100 0 APT25GN120B2DQ2(G) T = 125C J V = 800V R IF, FORWARD CURRENT (A) 80A 40A 20A TJ = 175C 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 5 0 T = 125C J V = 800V R 80A 80A 40A 20A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30 Duty cycle = 0.5 T = 175C J 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) Qrr trr trr IRRM 1.0 0.8 0.6 0.4 0.2 0.0 Qrr 20 10 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 200 CJ, JUNCTION CAPACITANCE (pF) 0 75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature 0 25 50 150 100 10-2005 50 Rev B 050-7603 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 1 TYPICAL PERFORMANCE CURVES +18V 0V diF /dt Adjust Vr APT10035LLL APT25GN120B2DQ2(G) D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circui t 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 34, Diode Reverse Recovery Waveform and Definitions T-MAXTM (B2) Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector (Cathode) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7603 5.45 (.215) BSC 2-Plcs. Rev B Gate Collector (Cathode) Emitter (Anode) 10-2005 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) |
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